A 60GHz fully integrated power amplifier using a distributed ring transformer in CMOS 65nm

Author

Pei, Yu ; Mahmoudi, Reza ; Essing, Jaap ; Van Roermund, Arthur

Author_Institution

Mixed-signal Microelectron. Group, Eindhoven Univ. of Technol., Eindhoven, Netherlands

fYear

2012

fDate

16-16 Nov. 2012

Firstpage

1

Lastpage

4

Abstract

This paper describes a fully integrated power amplifier working at 60GHz band and implemented in CMOS 65nm technology. The ring topology of a distributed active transformer (DAT) is applied to realize efficient power combination and impedance transformation simultaneously. The design consists of the transformer, active stages, and input power divider, and the matching networks between the components are implemented to form the complete system. The power amplifier achieves a simulated 21.36 dBm output power at 1 dB compression, with 1dB bandwidth of 12.5 GHz. The power added efficiency of total system is 4.56% and the transducer gain is 4.95 dB.

Keywords

CMOS integrated circuits; field effect MIMIC; impedance convertors; millimetre wave power amplifiers; power dividers; CMOS technology; DAT; bandwidth 12.5 GHz; distributed active transformer; distributed ring transformer; frequency 60 GHz; fully integrated power amplifier; gain 4.95 dB; impedance transformation; matching networks; power added efficiency; power divider; ring topology; size 65 nm; CMOS integrated circuits; Impedance; Power amplifiers; Power dividers; Power generation; Structural rings; Topology; Distributed active transformer; common-mode effect; input power divider; load-line matching;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications and Vehicular Technology in the Benelux (SCVT), 2012 IEEE 19th Symposium on

Conference_Location

Eindhoven

Print_ISBN

978-1-4673-2114-3

Electronic_ISBN

978-1-4673-2113-6

Type

conf

DOI

10.1109/SCVT.2012.6399387

Filename

6399387