Poly-Si active matrix organic light-emitting diode pixel circuit with compensation for threshold voltage and mobility variations

Author

Ilku Nam ; Doo Hyung Woo

Author_Institution

Dept. of Electr. Eng., Pusan Nat. Univ., Busan, South Korea

Volume

50

Issue

13

fYear

2014

fDate

June 19 2014

Firstpage

934

Lastpage

935

Abstract

A new pixel circuit and driving method for large-area, high-luminance active matrix organic light-emitting diode (AMOLED) displays were studied to improve the image quality. The AMOLED display was designed with low-temperature poly-silicon thin film transistors (TFTs), which have good stability but poor uniformity. To overcome the uniformity problem, the proposed pixel circuit compensates for variations in the threshold voltage and the mobility of the driving TFT. The proposed pixel circuit can operate in two compensation modes for high-luminance operation; and the black data insertion was introduced to improve the characteristics of moving images. The pixel circuit was designed for an 11.6"WXGA top-emission AMOLED panel, and its non-uniformity was estimated to be <; 4% with a mobility compensation time of 1 μs.

Keywords

LED displays; elemental semiconductors; organic light emitting diodes; silicon; thin film transistors; AMOLED displays; Si; TFT mobility; high-luminance operation; low-temperature polysilicon thin film transistors; mobility compensation; poly-Si active matrix organic light-emitting diode pixel circuit; threshold voltage;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2014.0297

Filename

6838842