• DocumentCode
    588147
  • Title

    Flexible Vth FinFETs with 9-nm-thick extremely-thin BOX

  • Author

    Endo, Kazuhiro ; Migita, S. ; Ishikawa, Yozo ; Liu, Yanbing ; Matsukawa, T. ; O´uchi, S. ; Tsukada, J. ; Mizubayashi, W. ; Morita, Yusuke ; Ota, Hiroyuki ; Yamauchi, Hiroyuki ; Masahara, M.

  • Author_Institution
    Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
  • fYear
    2012
  • fDate
    1-4 Oct. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    For the first time, we have successfully fabricated the Vth controllable connected multigate FinFET on the world´s thinnest 9-nm-thick extremely thin (ET) BOX SOI substrate. It was experimentally demonstrated that, by controlling the back (substrate) bias, the Vth of the FinFET on the ETBOX is flexibly tuned from low Vth to high Vth with keeping low sub-threshold slope.
  • Keywords
    MOSFET; silicon-on-insulator; ET BOX SOI substrate; Si; flexible voltage FinFET; low subthreshold slope; size 9 nm; thick extremely-thin BOX; voltage controllable connected multigate FinFET; Capacitance; Fabrication; FinFETs; Logic gates; Substrates; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2012 IEEE International
  • Conference_Location
    NAPA, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4673-2690-2
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2012.6404371
  • Filename
    6404371
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=588147