Total-ionizing-dose radiation response of 32 nm partially and 45 nm fully-depleted SOI devices

TID-induced changes in 32 nm PD SOI devices depend on the device variant: low V_T devices show minor increased in leakage, high V_T devices show negligible change. Simulated sensitivity of TID to the gate work function of the high-k metal gate and associated doping changes confirm that the body doping remains high and generally mitigates TID sensitivity. Preliminary ring oscillator measurements show no measurable change in supply current or frequency with TID. Specially designed experimental 45 nm SOI FDSOI devices exhibit a pronounced TID-induced V_T shift due to the coupling with the BOX layer.