Author :
O´uchi, S. ; Endo, Kazuhiro ; Maezawa, M. ; Nakagawa, T. ; Ota, Hiroyuki ; Liu, Y.X. ; Matsukawa, T. ; Ishikawa, Yozo ; Tsukada, J. ; Yamauchi, Hiroyuki ; Mizubayashi, W. ; Migita, S. ; Morita, Yusuke ; Sekigawa, Toshihiro ; Koike, Hideaki ; Sakamoto, Kaz
Author_Institution :
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
Performance of a double-gate (DG) FinFET in the cryogenic environment is discussed based on measurements and simulation. It was found that the DG FinFET has an excellent immunity to the kink effect in the cryogenic environment. Our physics-based compact model reproduced the measured I-V characteristics. The successful demonstration of an opamp consisting of the DG FinFETs at 4.2 K is also presented.
Keywords :
MOSFET; cryogenic electronics; semiconductor device models; DG FinFET; analog circuit demonstration; cryogenic environment; cryogenic operation; double-gate FinFET; kink effect; measured I-V characteristics; physics-based compact model; temperature 4.2 K; Cryogenics; Current measurement; FinFETs; Logic gates; Semiconductor device modeling; Temperature;
