Impact of back-gate bias on DC and RF characteristics in SiGe:C HBTs fabricated on thin-film SOI

Author

Jing Chen ; Tao Yu ; Jiexin Luo ; Qingqing Wu ; Zhan Chai ; Xi Wang

Author_Institution

Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China

fYear

2012

fDate

1-4 Oct. 2012

Firstpage

1

Lastpage

2

Abstract

The influence of back-gate bias on DC and RF characteristics in C-doped SiGe HBTs (SiGe:C HBTs) on thin-film silicon-on-insulator (SOI) was investigated. The experimental result indicates that a positive substrate bias is very effective in R_C and hysteresis reduction, and further improves the maximum f_T from 16 to 53GHz. Analytical relationships are developed to quantify the impact of substrate bias on electrical characteristics, which further approved by calibrated Sentaurus simulations.

Keywords

Ge-Si alloys; carbon; heterojunction bipolar transistors; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor materials; semiconductor thin films; silicon-on-insulator; DC characteristics; HBT; RF characteristics; SiGe:C; back-gate bias impact; calibrated Sentaurus simulations; electrical characteristics; frequency 16 GHz to 53 GHz; hysteresis reduction; positive substrate bias; thin-film SOI; thin-film silicon-on-insulator; Capacitance; Heterojunction bipolar transistors; Hysteresis; Integrated circuits; Radio frequency; Silicon germanium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference (SOI), 2012 IEEE International

Conference_Location

NAPA, CA

ISSN

1078-621X

Print_ISBN

978-1-4673-2690-2

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2012.6404388

Filename

6404388