• DocumentCode
    588161
  • Title

    RF SOI CMOS technology on commercial trap-rich high resistivity SOI wafer

  • Author

    Ben Ali, K. ; Roda Neve, C. ; Gharsallah, Ali ; Raskin, Jean-Pierre

  • Author_Institution
    Inst. of Inf. & Commun. Technol., Univ. catholique de Louvain (UCL), Louvain-la-Neuve, Belgium
  • fYear
    2012
  • fDate
    1-4 Oct. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper we aim at comparing the static and RF performances of passive and active fully-depleted (FD) SOI MOSFETs fabricated on top of either a standard or a trap-rich HR-SOI UNIBOND wafer both provided by SOITEC.
  • Keywords
    CMOS integrated circuits; MOSFET; radiofrequency integrated circuits; semiconductor technology; silicon-on-insulator; FD SOI MOSFET; RF SOI CMOS technology; RF performances; SOITEC; commercial trap-rich high resistivity SOI wafer; fully-depleted SOI MOSFET; trap-rich HR-SOI UNIBOND wafer; Conductivity; Coplanar waveguides; Logic gates; MOSFETs; Radio frequency; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2012 IEEE International
  • Conference_Location
    NAPA, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4673-2690-2
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2012.6404404
  • Filename
    6404404
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=588161