Title :
RF SOI CMOS technology on commercial trap-rich high resistivity SOI wafer
Author :
Ben Ali, K. ; Roda Neve, C. ; Gharsallah, Ali ; Raskin, Jean-Pierre
Author_Institution :
Inst. of Inf. & Commun. Technol., Univ. catholique de Louvain (UCL), Louvain-la-Neuve, Belgium
Abstract :
In this paper we aim at comparing the static and RF performances of passive and active fully-depleted (FD) SOI MOSFETs fabricated on top of either a standard or a trap-rich HR-SOI UNIBOND wafer both provided by SOITEC.
Keywords :
CMOS integrated circuits; MOSFET; radiofrequency integrated circuits; semiconductor technology; silicon-on-insulator; FD SOI MOSFET; RF SOI CMOS technology; RF performances; SOITEC; commercial trap-rich high resistivity SOI wafer; fully-depleted SOI MOSFET; trap-rich HR-SOI UNIBOND wafer; Conductivity; Coplanar waveguides; Logic gates; MOSFETs; Radio frequency; Silicon; Substrates;
Conference_Titel :
SOI Conference (SOI), 2012 IEEE International
Conference_Location :
NAPA, CA
Print_ISBN :
978-1-4673-2690-2
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2012.6404404
