DocumentCode :
58817
Title :
1.3 μm InGaAlAs asymmetric corrugationpitch- modulated DFB lasers with high mask margin at 28 Gbit/s
Author :
Nakahara, Kouji ; Wakayama, Yuki ; Kitatani, Takeshi ; Fukamachi, Toshihiko ; Sakuma, Yasushi ; Tanaka, Shoji
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Volume :
50
Issue :
13
fYear :
2014
fDate :
June 19 2014
Firstpage :
947
Lastpage :
948
Abstract :
Direct modulation of a 1.3 μm InGaAlAs asymmetric corrugation-pitch-modulated (ACPM) distributed feedback (DFB) laser operated at 28 Gbit/s was experimentally demonstrated. The laser exhibits linear light-current characteristics and a high-frequency response with a small roll-off at low frequency compared with a conventional λ/4-shifted DFB laser. Moreover, it attains a high mask margin (20%) under 28 Gbit/s operation at 55°C. These superior properties are due to a superior ACPM grating that suppresses longitudinal spatial hole-burning.
Keywords :
aluminium compounds; diffraction gratings; gallium compounds; indium compounds; optical hole burning; optical modulation; semiconductor lasers; ACPM ACPM grating; InGaAlAs; asymmetric corrugation-pitch-modulated DFB lasers; bit rate 28 Gbit/s; direct modulation; distributed feedback lasers; high mask margin; high-frequency response; linear light-current characteristics; longitudinal spatial hole-burning suppression; temperature 55 degC; wavelength 1.3 mum;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2014.0797
Filename :
6838849
Link To Document :
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