1.3 μm InGaAlAs asymmetric corrugationpitch- modulated DFB lasers with high mask margin at 28 Gbit/s

Author

Nakahara, Kouji ; Wakayama, Yuki ; Kitatani, Takeshi ; Fukamachi, Toshihiko ; Sakuma, Yasushi ; Tanaka, Shoji

Author_Institution

Central Res. Lab., Hitachi Ltd., Kokubunji, Japan

Volume

50

Issue

13

fYear

2014

fDate

June 19 2014

Firstpage

947

Lastpage

948

Abstract

Direct modulation of a 1.3 μm InGaAlAs asymmetric corrugation-pitch-modulated (ACPM) distributed feedback (DFB) laser operated at 28 Gbit/s was experimentally demonstrated. The laser exhibits linear light-current characteristics and a high-frequency response with a small roll-off at low frequency compared with a conventional λ/4-shifted DFB laser. Moreover, it attains a high mask margin (20%) under 28 Gbit/s operation at 55°C. These superior properties are due to a superior ACPM grating that suppresses longitudinal spatial hole-burning.

Keywords

aluminium compounds; diffraction gratings; gallium compounds; indium compounds; optical hole burning; optical modulation; semiconductor lasers; ACPM ACPM grating; InGaAlAs; asymmetric corrugation-pitch-modulated DFB lasers; bit rate 28 Gbit/s; direct modulation; distributed feedback lasers; high mask margin; high-frequency response; linear light-current characteristics; longitudinal spatial hole-burning suppression; temperature 55 degC; wavelength 1.3 mum;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2014.0797

Filename

6838849