DocumentCode
58834
Title
Dynamic characteristics of InGaAs/InP multiple quantum well discrete mode laser diodes emitting at 2 μm
Author
O´Carroll, J. ; Byrne, Dallan ; Kelly, B. ; Phelan, R. ; Gunning, F. C. Garcia ; Anandarajah, Prince M. ; Barry, Liam P.
Author_Institution
Unit 32 Trinity Technol. & Enterprise Campus, Eblana Photonics Ltd., Dublin, Ireland
Volume
50
Issue
13
fYear
2014
fDate
June 19 2014
Firstpage
948
Lastpage
950
Abstract
The dynamic characteristics of a discrete mode laser diode fabricated in the InGaAs/InP multiple quantum well material system and emitting single mode at λ ≃ 2.0 μm are reported. Results are presented on the electro-optical bandwidth, direct modulation and gain switched performance.
Keywords
III-V semiconductors; electro-optical effects; gallium arsenide; indium compounds; laser beams; laser modes; quantum well lasers; InGaAs-InP; direct modulation; dynamic characteristics; electro-optical bandwidth; gain switched performance; multiple quantum well discrete mode laser diodes; wavelength 2 mum;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2013.3257
Filename
6838850
Link To Document