Broadband Electroabsorption Modulators Design Based on Epsilon-Near-Zero Indium Tin Oxide

Author

Hongwei Zhao ; Yu Wang ; Capretti, Antonio ; Dal Negro, Luca ; Klamkin, Jonathan

Author_Institution

Dept. of Electr. & Comput. Eng., Boston Univ., Boston, MA, USA

Volume

21

Issue

4

fYear

2015

fDate

July-Aug. 2015

Firstpage

192

Lastpage

198

Abstract

In this paper, we propose a compact silicon (Si) electroabsorption modulator based on a slot waveguide with epsilon-near-zero indium tin oxide materials. In order to integrate the device with low-loss Si strip waveguides, both butt-coupling and evanescent-coupling schemes are investigated. For both cases, our electroabsorption modulator demonstrates a high extinction ratio and a low insertion loss over a wide optical bandwidth.

Keywords

electro-optical modulation; elemental semiconductors; indium compounds; optical design techniques; optical losses; optical waveguides; silicon; ITO; Si; broadband electroabsorption modulators design; butt-coupling schemes; epsilon-near-zero indium tin oxide materials; evanescent-coupling schemes; extinction ratio; insertion loss; low-loss Si strip waveguides; optical bandwidth; slot waveguide; Indium tin oxide; Modulation; Optical buffering; Optical waveguides; Silicon; Strips; Integrated Optoelectronics; Integrated optoelectronics; Optical Modulators; Plasmonics; optical modulators; plasmonics;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2014.2375153

Filename

6967699