Title :
New Advances on Heterogeneous Integration of III–V on Silicon
Author :
Guang-Hua Duan ; Olivier, Segolene ; Malhouitre, Stephane ; Accard, Alain ; Kaspar, Peter ; De Valicourt, Guilhem ; Levaufre, Guillaume ; Girard, Nils ; Le Liepvre, Alban ; Shen, Alexandre ; Make, Dalila ; Lelarge, Francois ; Jany, Christophe ; Ribaud, Ka
Author_Institution :
III-V Lab., Alcatel-Thales, Palaiseau, France
Abstract :
Recent advances on hybrid III-V/Si lasers and semiconductor optical amplifiers using wafer bonding are reported. Hybrid optical amplifiers exhibit 28 dB internal gain, 9 dBm saturation power in the output silicon waveguide, and 10-11 dB of internal noise factor. Moreover, using optical amplifiers as optical gates, we demonstrate a successful switching operation of optical packet/burst without penalties compared to classical optical amplifiers. The hybrid silicon lasers allow single mode operation and wavelength tunability over 30 nm by exploiting silicon ring resonators thermo-optical effect. Moreover transmission over 60 km single-mode fiber at 10 Gb/s from a directly modulated III-V on Silicon hybrid laser is also demonstrated. Finally, we achieved 21.4 Gb/s modulation over 12 wavelengths using a high-speed directly modulated silicon hybrid laser with improved E/O bandwidth.
Keywords :
III-V semiconductors; elemental semiconductors; hybrid integrated circuits; integrated optoelectronics; laser cavity resonators; laser modes; laser noise; laser tuning; optical burst switching; optical communication equipment; optical modulation; packet switching; passive optical networks; ring lasers; semiconductor optical amplifiers; silicon; thermo-optical effects; wafer bonding; waveguide lasers; Si; bit rate 10 Gbit/s; heterogeneous integration; high-speed directly modulated III-V-silicon hybrid laser; hybrid optical amplifiers; internal gain; internal noise factor; optical gates; optical packet-burst switching operation; output silicon waveguide; saturation power; semiconductor optical amplifiers; silicon ring resonators; single mode operation; single-mode fiber; thermo-optical effect; wafer bonding; wavelength tunability; Optical attenuators; Optical packet switching; Optical pulses; Optical switches; Optical transmitters; Optical waveguides; Silicon; Directly modulated laser; NG-PON2; Silicon photonics; hybrid integration; optical network; packet switching; photonic integrated circuit; semiconductor optical amplifier; silicon photonics; tunable laser; wafer bonding;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2014.2376174
