Impact of fin thickness and height on read stability / write ability in tri-gate FinFET based SRAM

In this paper, we research on fin thickness (T_fin) and fin height (H_fin) effects on read stability and write ability of tri-gate FinFET based SRAM cell. The degree of drain induced barrier lowering changes with T_fin and fin H_fin. This makes threshold voltage (V_th) vary. Thus, T_fin and H_fin also influence the mean and standard deviation of read static noise margin (RSNM) and word-line write trip voltage (WWTV) since V_th variation is a dominant factor determining them. If T_fin increases, the mean of RSNM (μ_RSNM) and the mean of WWTV (μ_WWTV) decreases and increases, respectively, while the standard deviation of RSNM (σ_RSNM) and WWTV (σ_WWTV) are almost not changed. If H_fin increases, the μ_RSNM and μ_WWTV decreases and increases, respectively, while both σ_RSNM and σ_WWTV decrease. However, for a sufficiently small T_fin, the effect of H_fin on μ_RSNM and μ_WWTV becomes negligible.