2D simulation of a SiGe HBT based on energy balance model

Author

Xiaolong Wu ; Zhengwei Du

Author_Institution

Dept. of Electron. Eng., Tsinghua Univ. Beijing, Beijing, China

fYear

2012

fDate

22-26 Oct. 2012

Firstpage

1029

Lastpage

1032

Abstract

An implementation of the energy balance (EB) model is presented to describe energy transport in heterostructure transistors in this paper. As an application, a 2D simulation of a SiGe heterostructure bipolar transistor (HBT) is carried out. Some typical numerical results are presented, such as the I-V curve, distribution of electron density, current density and electron temperature, etc. Compared with the classical drift diffusion (DD) model, the EB model gives more accurate results at the cost of time and space complexity.

Keywords

Ge-Si alloys; current density; electron density; heterojunction bipolar transistors; semiconductor materials; 2D simulation; DD model; EB model; I-V curve; SiGe; classical drift diffusion model; current density; electron density distribution; electron temperature; energy balance model; energy transport; heterostructure bipolar transistor; heterostructure transistors; silicon germanium HBT; space complexity; time complexity; Equations; Heterojunction bipolar transistors; Mathematical model; Numerical models; Poisson equations; Semiconductor process modeling; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas, Propagation & EM Theory (ISAPE), 2012 10th International Symposium on

Conference_Location

Xian

Print_ISBN

978-1-4673-1799-3

Type

conf

DOI

10.1109/ISAPE.2012.6408950

Filename

6408950