Implementation of unipolar inverter based on spatial wave-function switched FET (SWSFET)

Author

Karmakar, Sanjay ; Chandy, John A. ; Jain, Faquir C.

Author_Institution

Intel Corp., Hillsboro, OR, USA

fYear

2012

fDate

7-9 Aug. 2012

Firstpage

1

Lastpage

4

Abstract

The spatial wave-function switched field effect transistor (SWSFET) has two or three low band-gap quantum well channels that can conduct carrier flow from source to drain of the SWSFET. Because of this property, SWSFETs are useful to implement different multi-valued logic with reduced device count. In this work, we introduce the circuit model of a SWSFET and the design of a unipolar inverter where only one kind of charge carrier contributes to the current flow.

Keywords

field effect transistors; invertors; multivalued logic; semiconductor device models; semiconductor quantum wells; SWSFET; SWSFET circuit model; low band-gap quantum well channels; multivalued logic; reduced device count; spatial wave-function switched FET; spatial wave-function switched field effect transistor; unipolar inverter design; FETs; Integrated circuit modeling; Inverters; Logic gates; Resonant tunneling devices; Switches; SWSFETs; multi-channel FETs; unipolar inverters;

fLanguage

English

Publisher

ieee

Conference_Titel

Lester Eastman Conference on High Performance Devices (LEC), 2012

Conference_Location

Singapore

Print_ISBN

978-1-4673-2298-0

Electronic_ISBN

978-1-4673-2300-0

Type

conf

DOI

10.1109/lec.2012.6410970

Filename

6410970