Fast, high-efficiency Germanium quantum dot photodetectors

Author

Liu, Peng ; Le, S.T. ; Lee, Sang-Rim ; Paine, Drew ; Zaslavsky, A. ; Pacifici, D. ; Cosentino, S. ; Mirabella, S. ; Miritello, M. ; Crupi, Isodiana ; Terrasi, A.

Author_Institution

Dept. of Phys., Brown Univ., Providence, RI, USA

fYear

2012

fDate

7-9 Aug. 2012

Firstpage

1

Lastpage

3

Abstract

We present on high efficiency metal-insulator-semiconductor (MIS) photodetectors based on amorphous germanium quantum dots (QDs) embedded in a SiO₂ matrix. High internal quantum efficiencies (IQE) were achieved across a broad wavelength range, with peak value reaching 700% at -10 V applied bias due to high internal photoconductive gain. The transient photoresponse behavior is also studied and it was found that the response time of the photodetector depends on the thickness of the QD layer. We also discuss the conduction mechanism which leads to the high photoconductive gain.

Keywords

germanium; photoconducting devices; photodetectors; semiconductor quantum dots; silicon compounds; Ge-SiO₂; IQE; MIS photodetector; QD; amorphous germanium quantum dot; conduction mechanism; internal photoconductive gain; internal quantum efficiency; metal-insulator-semiconductor photodetector; transient photoresponse behavior; voltage -10 V; Films; Photodetectors; Photonics; Quantum dots; Silicon; Time factors; Wavelength measurement; Germanium; photodetector; quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Lester Eastman Conference on High Performance Devices (LEC), 2012

Conference_Location

Singapore

Print_ISBN

978-1-4673-2298-0

Electronic_ISBN

978-1-4673-2300-0

Type

conf

DOI

10.1109/lec.2012.6410978

Filename

6410978