Title :
Fast, high-efficiency Germanium quantum dot photodetectors
Author :
Liu, Peng ; Le, S.T. ; Lee, Sang-Rim ; Paine, Drew ; Zaslavsky, A. ; Pacifici, D. ; Cosentino, S. ; Mirabella, S. ; Miritello, M. ; Crupi, Isodiana ; Terrasi, A.
Author_Institution :
Dept. of Phys., Brown Univ., Providence, RI, USA
Abstract :
We present on high efficiency metal-insulator-semiconductor (MIS) photodetectors based on amorphous germanium quantum dots (QDs) embedded in a SiO2 matrix. High internal quantum efficiencies (IQE) were achieved across a broad wavelength range, with peak value reaching 700% at -10 V applied bias due to high internal photoconductive gain. The transient photoresponse behavior is also studied and it was found that the response time of the photodetector depends on the thickness of the QD layer. We also discuss the conduction mechanism which leads to the high photoconductive gain.
Keywords :
germanium; photoconducting devices; photodetectors; semiconductor quantum dots; silicon compounds; Ge-SiO2; IQE; MIS photodetector; QD; amorphous germanium quantum dot; conduction mechanism; internal photoconductive gain; internal quantum efficiency; metal-insulator-semiconductor photodetector; transient photoresponse behavior; voltage -10 V; Films; Photodetectors; Photonics; Quantum dots; Silicon; Time factors; Wavelength measurement; Germanium; photodetector; quantum dots;
Conference_Titel :
Lester Eastman Conference on High Performance Devices (LEC), 2012
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2298-0
Electronic_ISBN :
978-1-4673-2300-0
DOI :
10.1109/lec.2012.6410978
