Title :
InGaZnO Thin-Film Transistors Modified by Self-Assembled Monolayer With Different Alkyl Chain Length
Author :
Peng Xiao ; Linfeng Lan ; Ting Dong ; Zhenguo Lin ; Sheng Sun ; Wei Song ; Junbiao Peng
Author_Institution :
State Key Lab. of Luminescent Mater. & Devices, South China Univ. of Technol., Guangzhou, China
Abstract :
InGaZnO (IGZO) thin-film transistors (TFTs) modified by self-assembled monolayers (SAMs) based on triethoxysilane (TES) with three different alkyl chain lengths were fabricated and the relationship between the SAM chain length and the TFT electrical properties was investigated. The mobility increased and the hysteresis of transfer curves was reduced after SAM-modification, owing to less adsorption/ desorption effect on the IGZO surface. IGZO-TFTs modified by TES with longer alkyl chain lengths exhibited better electrical performance, which was attributed to the formation of a more hydrophobic and higher ordered monolayer due to the cohesive interaction between the molecules.
Keywords :
II-VI semiconductors; adsorption; desorption; gallium compounds; hydrophobicity; indium compounds; monolayers; self-assembly; thin film transistors; zinc compounds; InGaZnO; adsorption; alkyl chain length; alkyl chain lengths; cohesive interaction; desorption; electrical properties; hysteresis; mobility; self-assembled monolayer; thin-film transistors; transfer curves; triethoxysilane; Hysteresis; Logic gates; Object recognition; Passivation; Stress; Thin film transistors; IGZO; Thin film transistors; modification; self-assembled monolayer; thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2431741
