DocumentCode :
590494
Title :
A low-actuation voltage design for RF CMOS-MEMS switches
Author :
Horng-Hsiang Lai ; Wen-Chien Chen ; Sheng-Shian Li
Author_Institution :
Dept. of Power Mech. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear :
2012
fDate :
28-31 Oct. 2012
Firstpage :
1
Lastpage :
4
Abstract :
A switch-based micromechanical actuator fabricated using a foundry-oriented CMOS-MEMS platform has been demonstrated with low actuation voltages via the pull-in aided frame design. With such a two-stage mechanical design, the actuation voltage of the proposed actuator has been reduced by 35% as compared to that of the conventional single-stage counterpart with the same off-state gap spacing while the switch structure of this work still preserves similar switching time (i.e., relatively the same fundamental resonance frequency). The switch design methodology and foundry-type fabrication technology is expected to bring mechanical on/off switching capability into high-Q CMOS-MEMS circuits for future multimode, multi-band wireless communication systems.
Keywords :
CMOS integrated circuits; microactuators; microfabrication; microswitches; radiocommunication; RF CMOS-MEMS switch; foundry type fabrication technology; mechanical design; mechanical on-off switching; multiband wireless communication system; multimode communication; off-state gap spacing; pull-in aided frame design; switch-based micromechanical actuator; Actuators; Electrodes; Electrostatics; Force; Resonant frequency; Switches; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2012 IEEE
Conference_Location :
Taipei
ISSN :
1930-0395
Print_ISBN :
978-1-4577-1766-6
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2012.6411335
Filename :
6411335
Link To Document :
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