DocumentCode :
590559
Title :
Challenges in visible wavelength detection using optically transparent oxide semiconductors
Author :
Sungsik Lee ; Nathan, Arokia ; Robertson, John
Author_Institution :
London Center for Nanotechnol., Univ. Coll. London, London, UK
fYear :
2012
fDate :
28-31 Oct. 2012
Firstpage :
1
Lastpage :
4
Abstract :
We discuss the development of amorphous oxide semiconductor technology for optical sensor applications. In particular, we discuss the challenges of detecting visible wavelengths using this family of materials, which are known to be optically transparent due to their relatively large bandgap energy. One of the main issues with amorphous oxide semiconductors (AOS) is the ionization of the oxygen vacancies (VO) under illumination. While this can be beneficial in terms of optical absorption and high photoconductive gain, it can give rise to persistent photoconductivity (PPC). We will present techniques to overcome the PPC, and discuss how to achieve the high photoconductive gain for image sensor applications.
Keywords :
image sensors; light absorption; optical sensors; AOS; PPC; amorphous oxide semiconductor technology; image sensor applications; optical absorption; optical sensor applications; oxygen vacancy ionization; persistent photoconductivity; photoconductive gain; using optically transparent oxide semiconductors; visible wavelength detection; Acceleration; Charge carrier processes; Lighting; Logic gates; Spontaneous emission; Stress; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2012 IEEE
Conference_Location :
Taipei
ISSN :
1930-0395
Print_ISBN :
978-1-4577-1766-6
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2012.6411471
Filename :
6411471
Link To Document :
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