Title :
Efficiency improvement using a hybrid power module in 6.6kW Non-Isolated On-Vehicle Charger
Author :
Ouwerkerk, D. ; Han, Trung ; Preston, J.
Author_Institution :
Global Power Electron., Inc., USA
Abstract :
Silicon Carbide (SiC) is a developing technology that offers high temperature capability and improved efficiency to a variety of power conversion system applications. At this time SiC Schottky Barrier Diodes (SBDs) are becoming available for commercial use. With time higher current and voltage capabilities will be realized along with higher yields, lower costs, and a wide selection of devices available (including SiC switches). This paper specifically compares efficiency improvements that are currently possible with Silicon (Si) IGBT switches and fast Si diodes versus SiC diodes in a non-isolated 6.6kW On-Vehicle Charger. This compares a full Si Boost Module with a Si IGBT / SiC diode Boost Module. Test data presented is measured in the same system, at the same points of operation, using the conventional Si and hybrid Si/SiC power modules. The measured power conversion efficiency of the proposed on-vehicle charger is 96.4% with the SiC SBD based hybrid Boost Module. The 1.4% conversion efficiency gain is realizable using the hybrid Boost Module.
Keywords :
Schottky barriers; Schottky diodes; battery chargers; battery powered vehicles; hybrid electric vehicles; power conversion; power semiconductor switches; silicon; silicon compounds; wide band gap semiconductors; SBD; Schottky barrier diodes; Si; SiC; conversion efficiency gain; efficiency improvements; full silicon boost module; hybrid power module; nonisolated on-vehicle charger; power 6.6 kW; power conversion efficiency; power conversion system applications; silicon IGBT switch; silicon IGBT-silicon carbide diode boost module; Degradation; Electromagnetic compatibility; Insulated gate bipolar transistors; Packaging; Silicon; Switches;
Conference_Titel :
Vehicle Power and Propulsion Conference (VPPC), 2012 IEEE
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-0953-0
DOI :
10.1109/VPPC.2012.6422719