Title :
Effect of ultrasonic irradiation time on ZnO nanostructures prepared by solution-immersion method
Author :
Azlinda, A. ; Khusaimi, Z. ; Mohamed, R. ; Rusop, M.
Author_Institution :
NANO-SciTech Centre (NST), Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia
Abstract :
In this work, we report an optimisation of ultrasonic irradiation time on the synthesis of ZnO thin films to the photoluminescence (PL), surface morphologies and structural properties of ZnO on gold-seeded Si substrate. Surface morphology of the thin films was studied using field emission scanning electron microscope (FESEM). The photoluminescence and structural properties are observed using PL-Raman spectroscopy. Clusters of ZnO nano-flower with serrated broad petals consist of porous like structure (diameter 30-60 nm) were interestingly formed. This structure is seemingly not affected by the changes of ultrasonic irradiation time. These properties are especially useful for optoelectronic devices.
Keywords :
II-VI semiconductors; Raman spectra; field emission electron microscopy; nanofabrication; nanostructured materials; optimisation; photoluminescence; scanning electron microscopy; semiconductor thin films; surface morphology; ultrasonic waves; wide band gap semiconductors; zinc compounds; Au-Si; FESEM; Raman spectroscopy; ZnO; field emission scanning electron microscopy; nanoflower; nanostructured materials; optimisation; photoluminescence; size 30 nm to 60 nm; solution-immersion Method; structural properties; surface morphology; thin films; ultrasonic irradiation; Barium; Business; Channel hot electron injection; Hafnium; Mercury (metals); FESEM; gold-seeded Si substrate; photoluminescence; solution-immersion method; ultrasonic time;
Conference_Titel :
Business, Engineering and Industrial Applications (ISBEIA), 2012 IEEE Symposium on
Conference_Location :
Bandung
Print_ISBN :
978-1-4577-1632-4
DOI :
10.1109/ISBEIA.2012.6422876