Improving the Electrostatic Discharge Robustness of a Junction Barrier Schottky Diode Using an Embedded p-n-p BJT

Author

Chung-Yu Hung ; Tzu-Cheng Kao ; Jian-Hsing Lee ; Jeng Gong ; Kuo-Hsuan Lo ; Hung-Der Su ; Chih-Fang Haung

Author_Institution

Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

35

Issue

10

fYear

2014

fDate

Oct. 2014

Firstpage

1052

Lastpage

1054

Abstract

The high-voltage (H-V) junction barrier Schottky (JBS) diode is often incorporated into the input or output of H-V integrated circuits. When the chip is connected to the external environment, it inevitably suffers electrostatic discharge (ESD) stress. However, the JBS diode can only withstand the forward-mode ESD but it is highly vulnerable to reverse-mode ESD. In this letter, a new kind of JBS diode that is incorporated with a p-n-p bipolar is developed. The experimental results demonstrated that the new device can improve the failure threshold voltages of the human body mode and machine mode by at least four times. The area increase for the new device is 2.2%.

Keywords

Schottky diodes; bipolar transistors; electrostatic devices; electrostatic discharge; HV JBS; HV integrated circuit; electrostatic discharge robustness; electrostatic discharge stress; embedded p-n-p BJT; failure threshold voltage; forward-mode ESD; high-voltage junction barrier Schottky diode; human body mode; machine mode; p-n-p bipolar; reverse-mode ESD; Electrostatic discharges; Junctions; Leakage currents; Robustness; Schottky diodes; Threshold voltage; ESD; Human-body mode; junction barrier Schottky diode (JBS); machine model;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2350020

Filename

6894126