InP-Based Type-II Quantum-Well Lasers and LEDs

Author

Sprengel, Stephan ; Grasse, Christian ; Wiecha, P. ; Andrejew, Alexander ; Gruendl, T. ; Boehm, G. ; Meyer, Roland ; Amann, Matthias

Author_Institution

Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany

Volume

19

Issue

4

fYear

2013

fDate

July-Aug. 2013

Firstpage

1900909

Lastpage

1900909

Abstract

Type-II InP-based light sources provide a promising concept for mid-infrared lasers. These have recently made huge progress, as the first electrically and optically pumped lasers could be demonstrated beyond the wavelength limit for type-I InP-based lasers (~2.3 μm). In this paper, we introduce the material system and device concepts, and report the latest achievements, such as electrically pumped lasing operation up to a wavelength of 2.6 μm in pulsed mode, continuous-wave resonant-cavity light-emitting diode operation up to a wavelength of 3.3 μm at 20-80 °C and photoluminescence even up to 3.9 μm.

Keywords

infrared spectra; light emitting diodes; light sources; optical pumping; photoluminescence; quantum well lasers; LED; continuous-wave light-emitting diode; electrical pumping; electrically pumped lasers; mid-infrared lasers; optical pumping; photoluminescence; pulsed mode; resonant-cavity light-emitting diode; temperature 20 degC to 80 degC; type-II InP-based light sources; type-II quantum-well lasers; wavelength 2.6 mum; wavelength 3.3 mum; Charge carrier processes; Gas lasers; Indium phosphide; Light emitting diodes; Optical pumping; Wave functions; GaAsSb; GaInAs; InP; Laser; light-emitting diode (LED); type-II;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2013.2247572

Filename

6463423