DocumentCode
59234
Title
Deposition of High-Efficiency Microcrystalline Silicon Solar Cells Using SiF
/H
Author
Dornstetter, Jean-Christophe ; Kasouit, S. ; Roca i Cabarrocas, Pere
Author_Institution
Gas & Power, Total S.A., Paris La Défense, France
Volume
3
Issue
1
fYear
2013
fDate
Jan. 2013
Firstpage
581
Lastpage
586
Abstract
In this paper, we present results on microcrystalline silicon solar cells that are deposited from SiF4/H2/Ar mixtures, on which efficiencies exceeding 9% have already been obtained. Structural characterizations of the cells indicate a fully crystalline material with no preferential crystallographic orientation. This suggests that, as opposed to microcrystalline silicon cells deposited using silane, an amorphous phase is not required to passivate defects at column boundaries. These results are discussed in light of the specific growth mechanism and structural properties associated with film deposition using SiF4. They pave the way toward low-cost, high-performance polycrystalline cells on glass.
Keywords
elemental semiconductors; gas mixtures; semiconductor growth; semiconductor thin films; silicon; solar cells; vapour deposition; Si; amorphous phase; cell structural characterizations; column boundaries; film deposition; fully crystalline material; glass; growth mechanism; high-efficiency microcrystalline silicon solar cell deposition; high-performance polycrystalline cells; silane-hydrogen-Ar mixtures; structural properties; Argon; Grain boundaries; Integrated circuits; Photovoltaic cells; Radio frequency; Silicon; Microcrystalline silicon; silicon tetrafluoride; solar cells; thin films;
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2012.2221683
Filename
6335457
Link To Document