• DocumentCode
    59234
  • Title

    Deposition of High-Efficiency Microcrystalline Silicon Solar Cells Using SiF _{\\bf 4} /H _{\\bf 2}

  • Author

    Dornstetter, Jean-Christophe ; Kasouit, S. ; Roca i Cabarrocas, Pere

  • Author_Institution
    Gas & Power, Total S.A., Paris La Défense, France
  • Volume
    3
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    581
  • Lastpage
    586
  • Abstract
    In this paper, we present results on microcrystalline silicon solar cells that are deposited from SiF4/H2/Ar mixtures, on which efficiencies exceeding 9% have already been obtained. Structural characterizations of the cells indicate a fully crystalline material with no preferential crystallographic orientation. This suggests that, as opposed to microcrystalline silicon cells deposited using silane, an amorphous phase is not required to passivate defects at column boundaries. These results are discussed in light of the specific growth mechanism and structural properties associated with film deposition using SiF4. They pave the way toward low-cost, high-performance polycrystalline cells on glass.
  • Keywords
    elemental semiconductors; gas mixtures; semiconductor growth; semiconductor thin films; silicon; solar cells; vapour deposition; Si; amorphous phase; cell structural characterizations; column boundaries; film deposition; fully crystalline material; glass; growth mechanism; high-efficiency microcrystalline silicon solar cell deposition; high-performance polycrystalline cells; silane-hydrogen-Ar mixtures; structural properties; Argon; Grain boundaries; Integrated circuits; Photovoltaic cells; Radio frequency; Silicon; Microcrystalline silicon; silicon tetrafluoride; solar cells; thin films;
  • fLanguage
    English
  • Journal_Title
    Photovoltaics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    2156-3381
  • Type

    jour

  • DOI
    10.1109/JPHOTOV.2012.2221683
  • Filename
    6335457