Optimization of Tunneling Magnetoresistance in Perpendicular Magnetic Tunnel Junctions With Co|Pd Reference Layers

Author

Hu, Gangwei ; Topuria, Teya ; Rice, P.M. ; Jordan-Sweet, Jean ; Worledge, D.C.

Author_Institution

IBM T. J. Watson Res. Center, IBM-Headway MRAM Alliance, Yorktown Heights, NY, USA

Volume

4

fYear

2013

fDate

2013

Firstpage

3000104

Lastpage

3000104

Abstract

We report on the optimization of Co|Pd-multilayer-based reference layers in magnetic tunnel junctions with perpendicular magnetic anisotropy. By inserting a thin Ta-spacer layer between the CoFeB interfacial layer and Co|Pd multilayer, a high tunneling magnetoresistance up to 98.5% can be achieved. Electron energy loss spectroscopy and synchrotron X-ray diffraction studies show that the high magnetoresistance is related primarily to the suppression of Pd diffusion and secondarily to improved CoFeB texture during annealing.

Keywords

X-ray diffraction; annealing; boron alloys; cobalt; cobalt alloys; diffusion; electron energy loss spectra; iron alloys; magnetic multilayers; palladium; perpendicular magnetic anisotropy; tantalum; texture; tunnelling magnetoresistance; Co-Pd-Ta-CoFeB; annealing; diffusion; electron energy loss spectroscopy; interfacial layer; multilayer-based reference layers; optimization; perpendicular magnetic anisotropy; perpendicular magnetic tunnel junctions; synchrotron X-ray diffraction; texture; thin Ta-spacer layer; tunneling magnetoresistance; Annealing; Junctions; Magnetic tunneling; Nonhomogeneous media; Temperature measurement; Tunneling magnetoresistance; Spin electronics; magnetic tunnel junctions; perpendicular anisotropy; spin-transfer-torque random-access memory; tunneling magnetoresistance;

fLanguage

English

Journal_Title

Magnetics Letters, IEEE

Publisher

ieee

ISSN

1949-307X

Type

jour

DOI

10.1109/LMAG.2013.2270454

Filename

6568933