Monolithically Integrated MESFET Devices on a High-Speed Silicon Photonics Platform

Author

Novack, Ari ; Shi, Ruoyun ; Streshinsky, Matthew ; Jingcheng Tao ; Kang Tan ; Lim, Andy Eu-Jin ; Guo-Qiang Lo ; Baehr-Jones, Tom ; Hochberg, Michael

Author_Institution

Inst. of Microelectron., Singapore, Singapore

Volume

32

Issue

22

fYear

2014

fDate

Nov.15, 15 2014

Firstpage

4345

Lastpage

4348

Abstract

We present the design and fabrication of complimentary metal-semiconductor field-effect transistors (MESFETs) monolithically integrated on a high-speed silicon photonics platform. The transistors were built in an existing silicon photonics process without any additional process steps or modifications to maintain consistent photonics performance. The MESFETs showed a threshold voltage of -1.4 and 2.0 V for NMES and PMES, respectively. The NMES transconductance was measured to be 46.4 μS/μm, and the cutoff frequency was shown to be 2.2 GHz. Transistors of this design can be simply integrated into silicon photonics platforms for on-chip feedback circuits.

Keywords

Schottky gate field effect transistors; elemental semiconductors; integrated optoelectronics; silicon; NMES; PMES; Si; complimentary metal-semiconductor field-effect transistors; cutoff frequency; frequency 2.2 GHz; high-speed silicon photonics platform; monolithically integrated MESFET devices; on-chip feedback circuits; threshold voltage; transconductance; voltage -1.4 V to 2.0 V; Logic gates; MESFETs; Modulation; Silicon photonics; Metal-semiconductor field-effect transistor; silicon photonics;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2014.2355818

Filename

6894133