GaSb-based integrated lasers and photodetectors on a Silicon-On-Insulator waveguide circuit for sensing applications in the shortwave infrared

Author

Hattasan, N. ; Gassenq, A. ; Cerutti, L. ; Rodriguez, J.B. ; Tournie, E. ; Roelkens, Gunther

Author_Institution

Photonics Res. Group, UGent, Ghent, Belgium

fYear

2012

fDate

13-16 Dec. 2012

Firstpage

1

Lastpage

4

Abstract

We report our results on GaSb photodiodes and lasers integrated on a Silicon-On-Insulator waveguide circuit. The photodiodes operate at room temperature with 0.4A/W responsivity for grating-assisted coupling and >;1 A/W for an evanescent design. On the other hand, integrated Fabry-Perot lasers operate in continuous wave at room temperature with a threshold current of 49.7mA.

Keywords

III-V semiconductors; gallium compounds; integrated optics; optical waveguides; photodetectors; photodiodes; semiconductor lasers; silicon-on-insulator; GaSb; Si; current 49.7 mA; evanescent design; grating-assisted coupling; integrated Fabry-Perot lasers; integrated lasers; photodetectors; photodiodes; sensing applications; shortwave infrared; silicon-on-insulator waveguide circuit; threshold current; Couplings; Epitaxial growth; Gas lasers; Gratings; Optical waveguides; Photodiodes; Waveguide lasers; GaSb; Silicon-On-Insulator; integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Global Conference (PGC), 2012

Conference_Location

Singapore

Print_ISBN

978-1-4673-2513-4

Type

conf

DOI

10.1109/PGC.2012.6458062

Filename

6458062