A 500μA low drop-out voltage regulator in 90-nm CMOS technology

Author

Hicham, A. ; Qjidaa, Hassan

Author_Institution

Lab. d´Electron., Univ. Sidi Mohamed Ben Abdellah, Fès, Morocco

fYear

2012

fDate

5-6 Nov. 2012

Firstpage

1

Lastpage

4

Abstract

The paper presents a CMOS low-dropout voltage regulator (LDO). By using wideband and low-current circuit techniques, high performances in terms of transient response, Implemented in 90-nm CMOS technology. The proposed LDO voltage regulator with 50-mA driving capability is presented utilizes paralleled input differential pairs and current amplifiers to provide fast transient response, the LDO itself should provide 0.1μs with transient variation of the voltage less than 153mV.

Keywords

CMOS integrated circuits; amplifiers; nanoelectronics; voltage regulators; CMOS low-dropout voltage regulator; CMOS technology; current 500 muA; current amplifier; low drop-out voltage regulator; low-current circuit technique; paralleled input differential pair; size 90 mm; time 0.1 mus; transient variation; wideband circuit technique; CMOS integrated circuits; Capacitors; Noise; Regulators; Transient response; Transistors; Voltage control; Frequency compensation (cap CMOS); Layout of schematic; Power supply rejection; Squared Output Noise; Transient response; low-dropout (LDO);

fLanguage

English

Publisher

ieee

Conference_Titel

Complex Systems (ICCS), 2012 International Conference on

Conference_Location

Agadir

Print_ISBN

978-1-4673-4764-8

Type

conf

DOI

10.1109/ICoCS.2012.6458540

Filename

6458540