High-Bandwidth and High-Responsivity Top-Illuminated Germanium Photodiodes for Optical Interconnection

Author

Chong Li ; Chunlai Xue ; Zhi Liu ; Buwen Cheng ; Chuanbo Li ; Qiming Wang

Author_Institution

State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China

Volume

60

Issue

3

fYear

2013

fDate

Mar-13

Firstpage

1183

Lastpage

1187

Abstract

In this paper, we report efficient high-speed top-illuminated p-i-n photodiodes with high responsivity fabricated from germanium (Ge) films grown directly on silicon-on-insulator substrates. The devices were characterized with respect to their dark current, responsivity, and 3-dB bandwidth (BW) in the near infrared. For a 20-μm-diameter device at room temperature, the dark current densities were approximately 38.3 mA/cm² at -1 V. The responsivity (mmb R) at 1.55 μm was 0.30 A/W, corresponding to a quantum efficiency of 24%. The 3-dB BW of the detector with 20-μm diameter is as high as 23.3 GHz.

Keywords

elemental semiconductors; germanium; optical interconnections; p-i-n photodiodes; silicon; silicon-on-insulator; Ge; Si; dark current densities; efficiency 24 percent; frequency 23.3 GHz; germanium films; high-bandwidth high-responsivity top-illuminated germanium photodiodes; high-speed top-illuminated p-i-n photodiodes; near infrared; optical interconnection; quantum efficiency; silicon-on-insulator substrates; size 20 mum; voltage -1 V; Absorption; Dark current; Detectors; PIN photodiodes; Silicon; Germanium; integrated optoelectronics; optical communication; optical interconnections; optoelectronic devices; photodetector;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2241066

Filename

6463446