• DocumentCode
    59485
  • Title

    Pulsed Growth Epitaxial Method of GaN-Based Light-Emitting Diodes on Patterned SiO2 AlN/Sapphire Template

  • Author

    Yu-An Chen ; Cheng-Huang Kuo ; Li-Chuan Chang ; Ji-Pu Wu

  • Author_Institution
    Inst. of Lighting & Energy Photonics, Nat. Chiao Tung Univ., Tainan, Taiwan
  • Volume
    50
  • Issue
    10
  • fYear
    2014
  • fDate
    Oct. 2014
  • Firstpage
    854
  • Lastpage
    859
  • Abstract
    In this paper, we investigated GaN-based light-emitting diodes (LEDs) with embedded air voids grown by pulsed growth epitaxial (PGE) method. The void shape can be successfully controlled using the patterned SiO2 AlN/sapphire template and pulsed growth method. By embedding the air voids, we could enhance the 20-mA output power by >61.9%, compared with conventional LED. The improvements could be attributed to the enhanced light extraction efficiency utilizing air voids and improved internal quantum efficiency through PGE method.
  • Keywords
    III-V semiconductors; gallium compounds; light emitting diodes; semiconductor epitaxial layers; voids (solid); wide band gap semiconductors; GaN; GaN-based light-emitting diodes; LED; SiO-AlN-Al2O3; air voids; internal quantum efficiency; light extraction efficiency; output power; pulsed growth epitaxial method; void shape; Crystals; Epitaxial growth; Epitaxial layers; Gallium nitride; III-V semiconductor materials; Light emitting diodes; Substrates; AlN; LED; Pulsed growth; voids;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2014.2353932
  • Filename
    6894153
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=59485