DocumentCode :
595
Title :
Characteristics and Application of Normally-Off SiC-JFETs in Converters Without Antiparallel Diodes
Author :
Cai, Chang ; Zhou, Weicheng ; Sheng, Kun
Author_Institution :
College of Electrical Engineering , Zhejiang University, Hangzhou, China
Volume :
28
Issue :
10
fYear :
2013
fDate :
Oct. 2013
Firstpage :
4850
Lastpage :
4860
Abstract :
In this paper, reverse characteristics of vertical-channel SiC-JFETs similar to an equivalent diode are discussed and compared with an actual SiC-SBD. The relationship between the reverse conduction voltage and the applied gate-to-source voltage is extracted along with channel structure of JFETs. Experiments involving operation of normally-off SiC-JFETs in actual converters are then conducted with and without antiparallel SiC-SBDs at different temperatures. The issue of JFET channel mistriggering is observed and evaluated by introducing extra negative gate bias during the switch-off state. Excellent dynamic performance can be obtained with minimal reverse-recovery charge when the SiC-JFET is driven properly. The dynamic losses are then calculated in different conditions. The results indicate that SiC-JFETs can perform the function of antiparallel diodes with minimal performance sacrifice in converters. Furthermore, an actual SiC-JFET-based dc–dc converter with/without antiparallel SiC-SBDs is built to verify the influence of eliminating the external diodes. It is concluded that with slight modification in the gate driver circuit to maintain safety, antiparallel diodes could be eliminated in vertical-channel SiC-JFET-based applications.
Keywords :
Driver circuits; Educational institutions; JFETs; Logic gates; Schottky diodes; Silicon carbide; Temperature; Antiparallel diodes; JFET; reverse recovery; silicon carbide; synchronous rectification;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2012.2237417
Filename :
6403918
Link To Document :
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