DocumentCode
59666
Title
A UHF-RFID Transceiver With a Blocker-Canceller Feedback and +30 dBm Output Power
Author
Ghahremani, Amir ; Rezaei, Vahid Dabbagh ; Sharif Bakhtiar, Mehrdad
Author_Institution
Dept. of Electr. Eng., Sharif Univ. of Technol., Tehran, Iran
Volume
60
Issue
11
fYear
2013
fDate
Nov. 2013
Firstpage
3043
Lastpage
3054
Abstract
A single chip UHF-RFID transceiver front-end is presented. The chip was designed according to EPCglobal Class-1 Gen-2 and supports both ETSI and FCC requirements. The receiver front end is capable of rejecting self-jammers as large as +10 dBm with the aid of a feedback loop. The stability and the robustness of the loop and other system requirements are studied. A +30 dBm class-AB power amplifier (PA) with 28% PAE is also integrated on the chip. The pseudo differential architecture of the PA greatly reduces the injection of the signal into the substrate. A simple model is used to estimate the effect of the substrate noise injection by the PA on the receiving circuit modules and design guides are given. The chip is fabricated in a standard 0.18 μm CMOS process and occupies an area of 6 mm2. The receiver sensitivity in the talk mode with the transmission of +30 dBm output power by the PA is -87.4 dBm at the presence of +10 dBm self-jammer. The synthesizer phase noise at 800 kHz offset is better than -128 dBc/Hz and the PA satisfies the required spectrum mask when outputting an AM modulated signal at the maximum output power. The chip, excluding the PA, draws 51 mA from a 1.8 V supply.
Keywords
CMOS integrated circuits; UHF power amplifiers; differential amplifiers; phase noise; radio transceivers; radiofrequency identification; CMOS process; EPCglobal Class-1 Gen-2; ETSI requirement; FCC requirement; UHF-RFID transceiver; blocker-canceller feedback; class AB power amplifier; current 51 mA; frequency 800 kHz; pseudo differential architecture; receiver front end; receiving circuit module; single chip transceiver front end; size 0.18 mum; size 6 mm; spectrum mask; substrate noise injection; synthesizer phase noise; voltage 1.8 V; Mixers; Noise; Power generation; Receivers; Sensitivity; Standards; Transceivers; Active feedback; RF receiver; UHF-RFID; blocker-canceller; high-power amplifier; pseudo differential; substrate modeling;
fLanguage
English
Journal_Title
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher
ieee
ISSN
1549-8328
Type
jour
DOI
10.1109/TCSI.2013.2252671
Filename
6568975
Link To Document