Title :
Compact modeling for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding gate MOSFETs
Author :
Fasarakis, N. ; Tsormpatzoglou, A. ; Tassis, Dimitrios H. ; Papathanasiou, Kostas ; Dimitriadis, C.A. ; Ghibaudo, Gerard
Author_Institution :
Dept. of Phys., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece
Abstract :
In this work, analytical compact model for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding-gate (SG) MOSFETs is proposed. The double-gate (DG) model is extended to SG model using equivalent geometrical parameters. The developed model is described by single analytical equations valid in all regions of operation, from the subthreshold to strong inversion and from the linear to the saturation region. The results of the model are compared with the results of a numerical device simulator. The overall results reveal the very good accuracy of the proposed model, making the compact model suitable for circuit design simulation tools.
Keywords :
MOSFET; numerical analysis; SG MOSFET; circuit design simulation tools; compact modeling; light doped nanoscale cylindrical surrounding gate MOSFET; model equivalent geometrical parameters; numerical device simulator; single analytical equations; transcapacitances; Capacitance; Integrated circuit modeling; Logic gates; MOSFETs; Mathematical model; Numerical models; Semiconductor device modeling;
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2012 19th IEEE International Conference on
Conference_Location :
Seville
Print_ISBN :
978-1-4673-1261-5
Electronic_ISBN :
978-1-4673-1259-2
DOI :
10.1109/ICECS.2012.6463503
