Modeling and analysis of through silicon via: Electromagnetic and device simulation approach

Most existing approaches for analysis of 3D interconnects are solely based on using Maxwell´s equations with the semiconductor substrate modeled as a lossy medium. The nonlinear nature of semiconductor substrate has been generally ignored. In order to understand the physical mechanisms behind effects such as semiconductor nonlinearity, it is necessary to describe the semiconductor as nonlinear solid state plasma i.e. using device simulator. This paper addresses the main difference between electromagnetic and device simulators, and the need for combining the carrier transport equations of charged carriers and Maxwell´s equations to accurately model 3D interconnects.