DocumentCode
596972
Title
A passive CMOS rectifier with leakage current control for medical implants
Author
Ghanad, Mehrdad A. ; Dehollain, Catherine
Author_Institution
Radio Freq. Integrated Circuit Group (RFIC), Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
fYear
2012
fDate
9-12 Dec. 2012
Firstpage
520
Lastpage
523
Abstract
A passive rectifier for reducing reverse leakage currents and ripples of rectified output voltage is proposed. The Power Conversion Efficiency (PCE) of the rectifier is also improved by controlling the turn on time of the NMOS transistors. The rectifier is implemented with standard 0.18 um CMOS technology. The measured rectifier achieves 66 % PCE while delivering 3 mW to 1.8 Volt load at 13.56 MHz.
Keywords
CMOS integrated circuits; MOSFET; electric current control; leakage currents; prosthetics; rectifiers; NMOS transistors; frequency 13.56 MHz; leakage current control; medical implants; passive CMOS rectifier; power 3 mW; power conversion efficiency; rectified output voltage; reverse leakage currents; ripples; size 0.18 mum; standard CMOS technology; voltage 1.8 V; Current measurement; Implants; Leakage current; Rectifiers; Transistors; Voltage control; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems (ICECS), 2012 19th IEEE International Conference on
Conference_Location
Seville
Print_ISBN
978-1-4673-1261-5
Electronic_ISBN
978-1-4673-1259-2
Type
conf
DOI
10.1109/ICECS.2012.6463694
Filename
6463694
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