DocumentCode
597010
Title
CMOS SPADs selection, modeling and characterization towards image sensors implementation
Author
Garcia, Mario Macos ; Vinuesa, O.G. ; del Rio Fernandez, R. ; Verdu, B.P. ; Vazquez, Angel Rodriguez
Author_Institution
Inst. of Microelectron. of Sevilla, Univ. de Sevilla, Seville, Spain
fYear
2012
fDate
9-12 Dec. 2012
Firstpage
332
Lastpage
335
Abstract
The selection, modeling and characterization of Single Photon Avalanche Diodes (SPADs) are presented. Working with the standard 180nm UMC CMOS process, different SPAD structures are proposed in combination with several quenching circuits in order to compare their relative performances. Various configurations for the active region and the prevention of the premature edge breakdown are tested, looking for a miniaturization of the devices to implement image sensor arrays without loses in their performance.
Keywords
CMOS integrated circuits; avalanche photodiodes; image sensors; semiconductor device models; UMC CMOS; image sensor arrays; image sensors; quenching circuits; single photon avalanche diodes; size 180 nm; CMOS integrated circuits; CMOS technology; Integrated circuit modeling; Noise; Photonics; Standards; Structural rings;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems (ICECS), 2012 19th IEEE International Conference on
Conference_Location
Seville
Print_ISBN
978-1-4673-1261-5
Electronic_ISBN
978-1-4673-1259-2
Type
conf
DOI
10.1109/ICECS.2012.6463734
Filename
6463734
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