Design of a 80 Gbit/s SiGe BiCMOS fully differential input buffer for serial electrical communication

Author

De Keulenaer, T. ; Yu Ban ; Zhisheng Li ; Bauwelinck, J.

Author_Institution

Ghent Univ., Ghent, Belgium

fYear

2012

fDate

9-12 Dec. 2012

Firstpage

237

Lastpage

239

Abstract

This paper presents a high bandwidth trans-impedance amplifier (TIA) used as a high speed input buffer for next generation serial electrical communication. The input buffer presented in this work is a linear broadband low noise amplifier. It is demonstrated that it can be used for receiving baseband modulated electrical communication in different modulation formats (NRZ, PAM4, duobinary, ...) for bit rates up to 80 Gbit/s. With good impedance matching up to 50 GHz, an area of 0.18mm² and a power consumption of 80mW from a 2.5V power supply.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; impedance matching; operational amplifiers; wideband amplifiers; SiGe; SiGe BiCMOS; TIA; baseband modulated electrical communication; bit rate 80 Gbit/s; fully differential input buffer; high speed input buffer; impedance matching; linear broadband amplifier; low noise amplifier; next generation serial electrical communication; power 80 mW; transimpedance amplifier; voltage 2.5 V; Bandwidth; Impedance; Inductors; Integrated circuit modeling; Layout; Noise; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems (ICECS), 2012 19th IEEE International Conference on

Conference_Location

Seville

Print_ISBN

978-1-4673-1261-5

Electronic_ISBN

978-1-4673-1259-2

Type

conf

DOI

10.1109/ICECS.2012.6463757

Filename

6463757