• DocumentCode
    59704
  • Title

    Temperature-Dependent Measurements of Time-of-Flight Current Waveforms in Schottky CdTe Detectors

  • Author

    Suzuki, Kenji ; Sawada, Tsuyoshi ; Seto, Shinta

  • Author_Institution
    Hokkaido Inst. of Technol., Sapporo, Japan
  • Volume
    60
  • Issue
    4
  • fYear
    2013
  • fDate
    Aug. 2013
  • Firstpage
    2840
  • Lastpage
    2844
  • Abstract
    Temporal evolution of the time-of-flight current waveforms of Schottky CdTe detectors as a function of the DC bias duration has been measured at several different temperatures from 278 K to 315 K to investigate the nature of the defects responsible for the polarization phenomena. The electron transient current waveforms under the application of DC bias show polarization as evidenced by a change in the waveforms continuously from having a plateau to having a peak at the trailing edge and by the shift of the peak position to later times with an increasing DC bias duration. Three relaxation processes with time constants from less than a second to as long as hundreds of seconds at room temperature are involved in the evolution. On the basis of the observed temperature dependence of the internal electric field evolution, we have concluded that two out of three relaxation processes are attributed to the ionization of defects at 0.54 eV and 0.6 eV.
  • Keywords
    II-VI semiconductors; Schottky barriers; Schottky defects; cadmium compounds; chemical relaxation; ionisation; semiconductor counters; temperature measurement; wide band gap semiconductors; CdTe; DC bias duration; Schottky detectors; defect ionization; electron transient current waveforms; electron volt energy 0.54 eV; electron volt energy 0.6 eV; internal electric field evolution; polarization phenomena; relaxation processes; temperature 278 K to 315 K; temperature-dependent measurements; time-of-flight current waveforms; Current measurement; Detectors; Measurement by laser beam; Pulse measurements; Temperature dependence; Temperature measurement; Transient analysis; CdTe; polarization; time-of-flight;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2013.2251663
  • Filename
    6515696