• DocumentCode
    597292
  • Title

    Electrochemical aluminium oxide technology for production of electronics

  • Author

    Sokol, V. ; Shulgov, V.

  • Author_Institution
    Belarusian State University of Informatics and Radioelectronics (BSUIR), Minsk, Belarus
  • fYear
    2012
  • fDate
    3-7 Sept. 2012
  • Firstpage
    55
  • Lastpage
    56
  • Abstract
    The paper reviews the results of application of porous alumina formed using the electrochemical anodization process. Porous alumina is widely used in the microelectronics as a) anodized aluminum bases, b)systems of multilevel interconnections, c) aluminum packages for VLSIs and hybrid integrated circuits, d) thin-film temperature sensors, e) Al-based heating elements etc. Parameters of the structures with porous anodic alumina are summarized depending on the anodizing conditions.
  • Keywords
    Aluminum; Dielectrics; Heating; Integrated circuit interconnections; Resistance; Substrates; Temperature sensors; aluminum; electrochemical anodizing; multicrystalline modules; multilevel interconnection; porous anodic alumina;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Oxide Materials for Electronic Engineering (OMEE), 2012 IEEE International Conference on
  • Conference_Location
    Lviv, Ukraine
  • Print_ISBN
    978-1-4673-4491-3
  • Type

    conf

  • DOI
    10.1109/OMEE.2012.6464845
  • Filename
    6464845