• DocumentCode
    597295
  • Title

    Admittance and photoadmittance spectroscopy of zinc oxide layers grown on p-Si substrates by sol-gel and spin coating method

  • Author

    Popielarski, P. ; Bala, Waclaw ; Paprocki, K.

  • Author_Institution
    Kazimierz Wielki University, Institute of Physics, Bydgoszcz, Poland
  • fYear
    2012
  • fDate
    3-7 Sept. 2012
  • Firstpage
    47
  • Lastpage
    48
  • Abstract
    In this work, the dielectric response of ZnO thin films has been studied over a temperature range of 200 K – 550 K. The dielectric response of polycrystalline ZnO thin films in the frequency domain was measured from 0.1 Hz - to 5 MHz frequencies with a small AC signal amplitude at different temperatures. Influence of the light on conductivity has been also investigated. A universal power law relation was brought into picture to explain the frequency dependence of AC conductivity. The temperature dependence of AC conductivity was analyzed in detail. The activation energy obtained from the temperature dependence of AC conductivity was attributed to the shallow trap-controlled space charge conduction in the bulk of the sample.
  • Keywords
    Annealing; Capacitance; Conductivity; Frequency measurement; Semiconductor device measurement; Temperature measurement; Zinc oxide; Admittance spectroscopy; Sol-gel method; Zinc Oxide; electrical properties; thin films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Oxide Materials for Electronic Engineering (OMEE), 2012 IEEE International Conference on
  • Conference_Location
    Lviv, Ukraine
  • Print_ISBN
    978-1-4673-4491-3
  • Type

    conf

  • DOI
    10.1109/OMEE.2012.6464849
  • Filename
    6464849