• DocumentCode
    597308
  • Title

    Femtosecond relaxation dynamics of photo-excited carriers in Si nanoparticles embedded in SiO2 matrix

  • Author

    Kadan, V.M. ; Dan´ko, V.A. ; Indutnyi, I.Z. ; Dmitruk, I.M. ; Korenyuk, P.I. ; Blonskyi, I.V.

  • Author_Institution
    Institute of Physics of NAS of Ukraine, Kyiv, Ukraine
  • fYear
    2012
  • fDate
    3-7 Sept. 2012
  • Firstpage
    139
  • Lastpage
    139
  • Abstract
    We show that full saturation of the interface-located trap states by the photogenerated carriers under the femtosecond excitation in nano-Si/SiO2 results in the increase of the free carriers´ lifetime and the quantum yield of the luminescence. The observed increase of the quantum yield is unexpected, in contrast to the commonly observed decrease under nanosecond excitation.
  • Keywords
    Laser excitation; Nanocrystals; Photoluminescence; Shape; Silicon; Time domain analysis; femtosecond excitation; nano-Si/SiO2; pump-probe spectroscopy; trap states;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Oxide Materials for Electronic Engineering (OMEE), 2012 IEEE International Conference on
  • Conference_Location
    Lviv, Ukraine
  • Print_ISBN
    978-1-4673-4491-3
  • Type

    conf

  • DOI
    10.1109/OMEE.2012.6464891
  • Filename
    6464891
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=597308