Simulation of grading double hetero-junction non-polar InGaN solar cell

Author

Hsun-Wen Wang ; Pei-Chen Yu ; Hau-Vei Han ; Chien-Chung Lin ; Hao-Chung Kuo ; Shiuan-Huei Lin

Author_Institution

Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

143

Lastpage

145

Abstract

In this study, the characteristics of non-polar double heterojunction GaN/ In_xGa_1-xN solar cells with various indium contents are numerically investigated under AM 1.5 global spectrum using finite element analysis. By smoothing the interface band edge offset with graded junction, we see the enhancement on short circuit current and power conversion efficiency. The maximum efficiency of the simulation results reached 24.32 % when the major absorption region contains 65% of indium composition.

Keywords

III-V semiconductors; finite element analysis; gallium compounds; indium compounds; power conversion; semiconductor heterojunctions; short-circuit currents; solar cells; wide band gap semiconductors; InGaN; finite element analysis; global spectrum; graded junction; grading double heterojunction nonpolar solar cell; interface band edge offset; power conversion efficiency; short circuit current; Conferences; Decision support systems; Educational institutions; Electrooptical waveguides; Facsimile; Nanoelectronics; Photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6465979

Filename

6465979