The side effects and the effects of thickness of source/drain fin on P-Type FinFET devices

Author

Hsin-Chia Yang ; Wei-Yen Peng ; Wen-Shiang Liao ; Guo-Wei Wu ; Cheng-Yu Tsai ; Mu-Chun Wang ; Sung-Ching Chi ; Shea-Jue Wang

Author_Institution

Dept. of Electron. Eng., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

245

Lastpage

247

Abstract

The 3-D structural fin-like channels of FinFET suppress the leakage current as the sizes of devices get substantially shrunk. In this study, the fin-thickness effects on the electrical performances are mainly observed. Two different kinds of thickness (namely, 110nm, and 120nm) with the same channel length (0.1 micron) are put into comparison. The phosphorus implants of the same dose with different energies for N-well threshold voltage adjustment are also taken into account.

Keywords

MOSFET; etching; ion implantation; leakage currents; phosphorus; electrical performances; leakage current; p-type FinFET devices; phosphorus implants; side effects; source/drain fin; thickness; threshold voltage adjustment; Conferences; FinFETs; Implants; Leakage current; Logic gates; Performance evaluation; Threshold voltage; 3-D structure; FinFET Devices; Leakage current; Over Etching); Over Exposure;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6466012

Filename

6466012