Retention behavior of graphene oxide resistive switching memory on flexible substrate

Author

Fang Yuan ; Yu-Ren Ye ; Jer-Chyi Wang ; Zhigang Zhang ; Liyang Pan ; Jun Xu ; Chao-Sung Lai

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

288

Lastpage

290

Abstract

This work presents a flexible carbon based memory with the Al/graphene oxide (GO)/ITO structure fabricated at room temperature. The Al/GO/ITO devices show the unipolar resistive switching behavior with the resistance ratio to over 30, and sustain over 250 cycling without any resistance window closure. However, the retention fails due to the resistance increase of low resistance state (LRS). The mechanisms of switching and retention failure are studied.

Keywords

aluminium; electrical resistivity; flexible electronics; graphene; semiconductor storage; semiconductor switches; Al-CO-ITO; LRS; ReRAM; flexible carbon based memory; flexible substrate; graphene oxide resistive switching memory; low resistance state; resistance ratio; retention behavior; retention failure; temperature 293 K to 298 K; unipolar resistive switching behavior; Films; Graphene; Indium tin oxide; Mechanical factors; Resistance; Substrates; Switches; RRAM; graphene oxide; resistive switching; retention; unipolar;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6466025

Filename

6466025