Performance improvement of triple-junctions GaAs-based solar cell using SiO2-nanopillars/SiO2/TiO2 graded-index anti-reflection coating

Author

Jheng-Jie Liu ; Wen-Jeng Ho ; Jhih-Kai Syu ; Yi-Yu Lee ; Ching-Fuh Lin ; Hung-Pin Shiao

Author_Institution

Dept. of Electro-Opt. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

452

Lastpage

454

Abstract

This paper demonstrate experimentally the top-cell external quantum efficiency (EQE) improving of the triple-junction GaAs-based solar cell using a SiO₂-nanopillars/SiO₂/TiO₂ graded-index anti-reflection coating (GI-ARC). The reflectance and EQE of the solar cells with SiO₂/TiO₂ double-layer ARC and with SiO₂-nanopillars/SiO₂/TiO₂ GI-ARC are measured and compared. The reflectance of cell with SiO₂-nanopillar/SiO₂/TiO₂ GI-ARC had most favorable low reflectance between 550-700 nm wavelengths. Therefore, the EQE enhancement of 5.88% on top-cell and -1.56% on middle-cell and the best current matching were achieved.

Keywords

III-V semiconductors; antireflection coatings; gallium arsenide; inorganic compounds; solar cells; titanium compounds; EQE enhancement; GI-ARC; GaAs; SiO₂-SiO₂-TiO₂; current matching; double-layer ARC; external quantum efficiency; graded-index anti-reflection coating; nanopillars; triple-junction gallium arsenide-based solar cell; Broadband communication; Coatings; Current measurement; Photovoltaic cells; Reflectivity; Surface treatment; Wavelength measurement; SiO2-nanopillars; current matching; external quantum efficiency; graded-index anti-reflection coating; triple-junction solar cell;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6466075

Filename

6466075