Characterization of a-Se p-n junction fabricated using electrolysis in NaCl aq

Author

Onishi, M. ; Komiyama, K. ; Takeno, K. ; Saito, Ichitaro ; Miyazaki, W. ; Masuzawa, Toru ; Koh, A.T.T. ; Chua, Daniel H. C. ; Yamada, Tomoaki ; Sano, Natsuki ; Okano, Kunihisa

Author_Institution

Dept. of Mater. Sci., Int. Christian Univ., Tokyo, Japan

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

470

Lastpage

472

Abstract

In this paper, we introduce an electro-chemical doping method of amorphous selenium (a-Se) using NaClaq. Recently, an a-Se photovoltaic device fabricated using this method [1], has been announced and opened up the potential of a new impurity doping method. This study will further explore its possibilities by doping chlorine (Cl) and sodium (Na) and aim to fabricate a p-n junction by reversing the applied voltage during the electrolysis. The device is characterized through photoelectric measurements. The I-V characteristics show rectification under light illumination.

Keywords

amorphous state; chlorine; doping; electrodeposition; metallic thin films; p-n junctions; photoconductivity; rectification; selenium; sodium; I-V characteristics; NaCl; Se:Cl; Se:Na; amorphous selenium p-n junction; amorphous-Se photovoltaic device; applied voltage; chlorine doping; electrochemical doping; electrolysis; impurity doping method; light illumination; photoelectric measurements; rectification; sodium doping; Doping; Electrochemical processes; Electrodes; Films; Glass; Gold; Ions; amorphous; electrolysis and photoconductivity);

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6466080

Filename

6466080