DocumentCode
598293
Title
Searching for the optimal materials for phase change random access memories
Author
Ming-Hsiu Lee ; Raoux, S. ; Huai-Yu Cheng ; Hsiang-Lan Lung ; Chung Lam
Author_Institution
Emerging Central Lab., Macronix Int. Co., Ltd., Hsinchu, Taiwan
fYear
2012
fDate
Oct. 29 2012-Nov. 1 2012
Firstpage
1
Lastpage
4
Abstract
This paper discusses several key items needed to be considered for phase change random access memory applications from material selection points of view, which include data retention, write speed, cycling endurance, and fabrication process. Various characterization skills were used to probe the properties of the materials, which help to evaluate the feasibility for applying them in future products.
Keywords
phase change memories; cycling endurance; data retention; fabrication process; material selection; optimal materials; phase change random access memories; write speed; Computer architecture; Films; Phase change materials; Phase change random access memory; Temperature; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4673-2474-8
Type
conf
DOI
10.1109/ICSICT.2012.6467607
Filename
6467607
Link To Document