Title :
Quality improvement of IDSS in deep trench superjunction power VDMOSFET
Author :
Yung-Cheng Wang ; Zeng-Yi Fan ; Liang Yao ; Fei Wang ; Chao-Yang Zhang ; Liao, Shengcai ; Po Li ; Yi-Ping Huang
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
In this paper, new physical structure and electrical characteristics of deep trench superjunction power VDMOSFET were introduced comparing with traditional multiple epitaxy process. New deep trench process brought higher IDSS leakage in the wafer center, design and process improvements were implemented to achieve positive results.
Keywords :
isolation technology; power MOSFET; semiconductor device reliability; semiconductor junctions; IDSS leakage; deep trench process; deep trench superjunction power VDMOSFET; electrical characteristics; epitaxy process; physical structure; quality improvement; wafer center; Epitaxial growth; Filling; Fluid flow; Lattices; Power MOSFET; Resistance;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467623
