Title :
Effects of oxygen plasma etching and post-annealing on Pt Schottky contact on Mg-doped InZnO
Author :
Yan-Ping Deng ; Jia-Hong Wu ; Xin-Ping Qu
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Mg-doped InZnO (MIZO) films were prepared by sol-gel method. The surface of the films was treated by oxygen plasma. Pt was then deposited on O2-treated films to form MIZO/Pt Schottky diode. The I-V properties of this structure were studied under different oxygen plasma treatment conditions. The experimental results show that oxygen plasma treatment can improve the Schottky properties by minimizing the surface adsorbates and subsurface defects of MIZO films.
Keywords :
Schottky barriers; Schottky diodes; indium compounds; semiconductor doping; sol-gel processing; sputter etching; zinc compounds; I-V property; InZnO; MIZO film; Mg; Schottky contact; Schottky diode; oxygen plasma etching; oxygen plasma treatment condition; post-annealing; sol-gel method; surface treatment; Annealing; Etching; Films; Plasmas; Schottky barriers; Zinc oxide;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467625
