• DocumentCode
    598306
  • Title

    Catastrophic failure of silicon power MOS in space

  • Author

    Galloway, Kenneth F.

  • Author_Institution
    Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
  • fYear
    2012
  • fDate
    Oct. 29 2012-Nov. 1 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The physical models for the SEB and SEGR failure mechanisms of vertical power MOSFETS are reviewed, the vulnerability of new and advanced power MOSFET designs to these space-based failure mechanisms are discussed, and concerns about testing methodology for these catastrophic single-event effects are identified.
  • Keywords
    elemental semiconductors; failure analysis; power MOSFET; radiation effects; silicon; SEB failure mechanisms; SEGR failure mechanisms; Si; catastrophic failure; catastrophic single-event effects; physical models; power MOSFET designs; silicon power MOS; single-event burnout; single-event gate rupture; space-based failure mechanisms; testing methodology; vertical power MOSFET; Failure analysis; Logic gates; MOSFETs; Radiation effects; Silicon; Space vehicles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4673-2474-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2012.6467626
  • Filename
    6467626
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=598306