The Effect of Gate Dielectric Al2O3/ZnO on Interface Quality with N-GaAs

Author

Liu Chen ; Yu-Ming Zhang ; Hong-Liang Lu ; Yi-Men Zhang

Author_Institution

Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´an, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

In this paper, The Effect of Gate Dielectric Al₂O₃/ZnO on Interface Quality with N-GaAs has been investigated. The results measured by X-ray photoelectron spectroscopy show that the presence of ZnO can effectively suppress the formation of oxides at the interface between the GaAs and Al₂O₃. Using Terman method, the interface trap density has been extracted from C-V curves. It is found that the ZnO layer can effectively improve the interface quality.

Keywords

MOS capacitors; MOSFET; X-ray photoelectron spectra; alumina; atomic layer deposition; gallium arsenide; hole traps; interface states; zinc compounds; Al₂O₃-ZnO; GaAs; Terman method; X-ray photoelectron spectroscopy; gate dielectric; interface quality; interface trap density; oxide formation; Aluminum oxide; Capacitance-voltage characteristics; Gallium arsenide; Logic gates; Passivation; Zinc oxide; ALD; GaAs metal-oxide-semiconductor capacitor; interface trap density;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467640

Filename

6467640